五月婷网站,av先锋丝袜天堂,看全色黄大色大片免费久久怂,中国人免费观看的视频在线,亚洲国产日本,毛片96视频免费观看

泰州巨納新能源有限公司
中級會員 | 第4年

13651969369

當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>二維材料溶液>> 硫化鍺單層溶液

硫化鍺單層溶液

參   考   價(jià): 4833.4

訂  貨  量: ≥1 瓶

具體成交價(jià)以合同協(xié)議為準(zhǔn)

產(chǎn)品型號

品       牌2D Semiconductors

廠商性質(zhì)生產(chǎn)商

所  在  地泰州市

更新時(shí)間:2024-06-03 20:09:23瀏覽次數(shù):1124次

聯(lián)系我時(shí),請告知來自 化工儀器網(wǎng)
同類優(yōu)質(zhì)產(chǎn)品更多>
供貨周期 現(xiàn)貨 應(yīng)用領(lǐng)域 環(huán)保,化工,能源,綜合
This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol

This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by ultrasonic treatment. Since the starting material (synthetic GeS crystals) is highly crystalline, ultrasonic treatment to delaminate GeS layers yields highly crystalline GeSe mono- and few-layers suspended in isopropanol solution. The crystallinity of GeSe nanomaterial has been confirmed through electron energy dispersive spectroscopy (EDAX), Raman spectroscopy (FWHM<5 cm-1), and scanning electron microscopy (SEM) measurements. Lateral sizes of GeS flakes deposited onto different substrates range from ~10nm - ~10 um while thickness range from 1L to thicker sheets.

Solution type: By default 2Dsemiconductors USA will provide GeS sheets suspended in isopropanol owing to good dispersion, stability, and high performance. However, if your research requires other solvents, please contact us for more details and schedule for the product delivery.

Solution concentration:  To reduce shipping costs, easy customs agreement / border check-in processes, we ship supersaturated 2D solutions (~80-120 mg/L depending on the type of 2D layers). However, supersaturated solutions can be diluted to produce ~250-500mL of solution to deposit 2D layers onto desired substrates through simple and cost-effective spin-casting process.

Properties of GeS solutions


會員登錄

×

請輸入賬號

請輸入密碼

=

請輸驗(yàn)證碼

收藏該商鋪

X
該信息已收藏!
標(biāo)簽:
保存成功

(空格分隔,最多3個(gè),單個(gè)標(biāo)簽最多10個(gè)字符)

常用:

提示

X
您的留言已提交成功!我們將在第一時(shí)間回復(fù)您~
撥打電話
在線留言