13651969369
當前位置：泰州巨納新能源有限公司>>二維材料>>硒化物晶體>> 硒化銦晶體（99.995） In2Se3
GaTe 碲化鎵晶體 (Gallium Telluride)
| 供貨周期 | 現貨 | 應用領域 | 環(huán)保,化工,能源,綜合 |
|---|
硒化銦晶體 In2Se3(Indium Selenide)
晶體尺寸：8-10毫米
電學性能：半導體
晶體結構：六邊形
晶胞參數：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18
Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).
請輸入賬號
請輸入密碼
以上信息由企業(yè)自行提供，信息內容的真實性、準確性和合法性由相關企業(yè)負責，化工儀器網對此不承擔任何保證責任。
溫馨提示：為規(guī)避購買風險，建議您在購買產品前務必確認供應商資質及產品質量。
化工儀器網